GENNEVILLIERS, FRANCE: CAMECA, a world leader in scientific instrumentation and metrology solutions for semiconductor labs and fabs, has unveiled the latest addition to its line of high-end metrology systems—the EX-300 metrology tool targeted for front-end process control of 22 nm technology nodes and beyond.
“CAMECA is very proud to introduce the EX-300,” notes Dr. Michel Schuhmacher, CAMECA VP and CTO. “This highly versatile metrology tool benefits from CAMECA’s 10-years of experience with LEXES (Low-energy Electron induced X-ray Emission Spectrometry) technology.”
“We are convinced that the EX-300 will become the metrology tool of choice for semiconductor fabs integrating new challenging processes,” adds Dr. Schuhmacher. “The EX-300 offers unique capabilities for front-end compositional control at and near the surface. The instrument targets front-end process control for 22nm technology nodes and performs metrology of patterned wafers down to 30x30µm.”
The EX-300 utilizes LEXES, a unique surface probing technique pioneered by CAMECA. The technology is now well-established for addressing challenges in elemental composition, thickness determination and dopant dosimetry.
With dozens of CAMECA LEXFAB 300 instruments currently installed at the top-ten semiconductor fabrication facilities worldwide, the technology is considered the standard for semiconductor R&D and ramping-up phases at the most advanced nodes as well as for high-volume production monitoring.
CAMECA optimized the performance of the EX-300 for challenging High K Metal Gate (HKMG), epitaxial layers such as Boron in Silcon Germanium(B:SiGe) and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production. In addition, the instrument is designed to deliver enhanced long-term stability and minimize mean time to repair (MTTR).