Fairchild's UniFET II MOSFETs optimize consumer power converters

SAN JOSE, USA: Designers of switch mode power supplies need high voltage MOSFETs that can withstand reverse recovery current spikes and can reduce switching losses. With its in-depth understanding of MOSFET technology, Fairchild Semiconductor has developed an optimized power MOSFET, the UniFET II MOSFET, which features an improved body diode, reduced switching losses and the capability of withstanding double the current stress during diode recovery dv/dt mode.

Fairchild’s UniFET II MOSFETs deliver 50 percent better reverse recovery than alternate solutions. A slow reverse recovery can lead to the inability to handle the high reverse recovery current spike, more switching losses and the heating up of the power MOSFET. Fairchild’s solution can handle more than double the current stress than existing solutions.

These UniFET II MOSFETs are based on Fairchild’s advanced Planar technology, which offers a better Figure of Merit (FOM) (FOM: RDS(ON)*Qg). With lower input and output capacitances and best-in-class reverse recovery, these MOSFETs offer high efficiency.

And, by packing a high amount of power in a small package without excessive heat, this improves the overall efficiency of applications such as SMPS for LCD TVs and PDP TVs, SMPS for lighting systems, PC Power, and Server and Telecom power supplies.

Initial products offered in the UniFET II MOSFET series include the FDPF5N50NZ and the FDPF8N50NZ N-channel MOSFETS. The FDPF5N50NZ is a 500V, 4.5A, 1.5O device, featuring an RDS(ON) of 1.38O (Typ.) @VGS = 10V, ID = 2.25A; and a low gate charge (Typ. 9nC). The FDPF8N50NZ is a 500V, 8A, 0.85O device that features an RDS(ON) of 0.77O (Typ.) @ VGS = 10V, ID = 4A, as well as a low gate charge of 14nC (Typ.).

These devices are one of the few in the industry to have robust ESD capability of 2kV HBM. This strong ESD capability is instrumental in protecting the application from adverse electrostatic events.

As a power technology leader, Fairchild continues to offer a unique combination of functional, process and packaging technology to meet electronic design challenges. These MOSFETs are part of Fairchild’s comprehensive portfolio of MOSFETs that offer designers a wide range of breakdown voltages (-500V to 1000V), state-of-the-art packaging and industry-leading FOM to deliver efficient power management anywhere electronic power conversion is needed.