GREENSBORO, USA: RF Micro Devices Inc. has unveiled the RF5632, a 2.3–2.7 GHz power amplifier IC.
The RF5632 is optimized specifically for WiMAX systems and can be designed into multiple applications, including customer premises equipment (CPE), gateways, access points, LTE wireless infrastructure, and WiFi-based wireless high definition interface (WHDI) for wireless video distribution networks.
The RF5632 offers global customers a broadly applicable power amplifier IC featuring a powerful combination of industry-leading RF performance and best-in-class product size and ease-of-use.
The RF5632 integrates a 3-stage PA and power detector into an industry-leading 4x4mm QFN package, significantly minimizing customer design footprint requirements.
Additionally, the RF5632 operates from a standard 5V supply, eliminating additional power supply requirements, enhancing design flexibility and lowering bill-of-material costs (BOM). The RF5632 is also fully DC and RF tested including EVM at the rated output power, maximizing application yields and accelerating time-to-market.
The RF5632 delivers an EVM of 2.5% and meets or exceeds WiMAX and LTE spectral mask requirements with an output power of 28dBm in the 2.3–2.4GHz, 2.4–2.5GHz, and 2.5–2.7GHz frequency ranges. The bias of the PA may be controlled to accommodate a 22dB gain step to increase the dynamic range of the system. The RF5632 offers high gain of 34dB and high linear output power, with best-in-class efficiency.
The RF5632 maintains linearity over a wide range of temperatures and power outputs while the external match enables tuning for output power over multiple bands. The RF5632 also features internal input and inter-stage matching, a power-down mode and power detection. The RF5632 features InGaP HBT semiconductor technology and is packaged in a leadless chip carrier with a backside ground.
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