High K and ALD/CVD metal precursors

DUBLIN, IRELAND: Research and Markets has announced the addition of the "High K and ALD/CVD Metal Precursors" report to its offering.

Interconnects will drive the ALD/CVD metal precursor market to $403M by 2016, according to the report High K and ALD/CVD Metal Precursors, A Semiconductor Materials Report 2010. The recent recession notwithstanding, 2010 revenues are already expected to exceed 2007 levels by 3 percent. The metal precursor market comprises three main segments: interconnects, capacitors and gates.

The 2009 market size for CVD/ALD precursors for interconnect applications was approximately $100 million, of which $83 million is WF6 and TDMAT (Ti) used in established technologies. Organic growth, combined with the introduction of an ALD Cu barrier, will result in a 2016 interconnect metal precursor market of $303M.

The adoption of Ru as the Cu barrier could drive revenues even higher, though it is more likely that ALD Co will replace sputtered Ta/TaN at 22nm and beyond. Co precursor revenues are expected to approach $16 million by 2016, whereas Ru would result in $54 million in precursor revenues if it is the unlikely winner.