Alpha and Omega Semiconductor launches integrated MOSFET power stage in high density DFN3.3x3.3 package

SUNNYVALE, USA: Alpha and Omega Semiconductor (AOS) has released a highly integrated DFN3.3x3.3 dual MOSFET power stage optimized for synchronous buck DC-DC conversion.

The AON7900 features an innovative packaging technology that allows multiple power devices to be stacked on top of each other to deliver more current in a smaller footprint. The new product enables high power density DC-DC solutions for advanced notebook computers, servers, graphics cards, and telecom applications.

The AON7900 includes two of AOS' high performance Split Gate Technology (SGT) MOSFETs interconnected using AOS' proprietary die stacking technique. Compared to traditional dual packages where multiple dice are arranged side by side, the stacked approach has numerous benefits including higher power density enabled by lower on-resistance MOSFETs, and a simplified PCB footprint.

The result is a single 10mm2 power device that can deliver more than 12A of output current in a typical 12Vin to 1.8Vout DC-DC application. This solution provides designers with a high level of functionality and performance in miniature package that simplifies PCB layouts and in many cases replaces two discrete packages.