Taiwan foundry selects ASM for High-k ALD

ALMERE, THE NETHERLANDS: ASM International N.V. announced that a Taiwanese foundry has selected ASM's Pulsar atomic layer deposition (ALD) tool for volume manufacturing of its 28nm node high-k gate dielectric process.

Additionally, the foundry will pursue process development activity with ASM for their advanced generation high-k gates. ASM will deliver additional Pulsar process modules during the second quarter of 2009 for the advanced node development program. The foundry has worked with ASM's ALD high-k and metal gate equipment over the past four years to develop its high-k gate process, which utilizes hafnium-based materials.

"Achieving a successful high-k manufacturing process for the 28 nm node is a testament to ASM's ability to integrate new materials into manufacturing," said Glen Wilk, business unit manager for transistor products at ASM. "Having qualified our high-k process demonstrates its readiness for manufacturing at the 28nm node, and we look forward to advanced developments that extend those same benefits to future nodes."

ASM's Pulsar was the first tool to be used in volume manufacturing of high-k gates, starting at the 45 nm node and now that lead is extending to the 28nm node. ASM's high-k gate films include multiple hafnium based oxides, with aluminum oxide and lanthanum oxide available as high-k cap layers for metal electrode work function tuning.