ST. LOUIS, USA: Sigma-Aldrich announced a distribution agreement with Nanosys Inc., an advanced materials architect. Under the agreement, Sigma-Aldrich, through its Aldrich Materials Science business, is now distributing Nanosys-created silicon nanowires to the global scientific research community for the development of new applications in technologies such as solid-state lighting, electronics and energy storage.
“As Aldrich Materials Science continues to expand its nanomaterials offer, we are pleased to introduce an innovative line of silicon nanowires that includes undoped silicon nanowires as well as the higher conductivity, boron-doped nanowires,” said Dr. Kaushik Patel, Product Manager, Aldrich Materials Science.
Jason Hartlove, CEO of Nanosys, added: “The applications of these nanowires are, we believe, truly innovative and revolutionary. The fabrication of nanowires is challenging; therefore, a consistent and high-quality supply of these materials from Aldrich Materials Science is expected to enable scientists to accelerate their research to further develop a variety of new high-technology applications that can continue to open up exciting end product markets.
"In all aspects of the Aldrich Materials Science business, from manufacturing and custom R&D to distribution of materials from leading-edge technology companies such as Nanosys, we strive to fulfill our mission of focusing on materials so that our research customers can focus on “Architected and synthesized at the atomic level, our materials deliver exponential improvements in efficiency and performance.”
“This new distribution agreement with Sigma-Aldrich puts our technology directly into the hands of researchers who are doing exciting work in labs around the world, driving the use of architected material solutions in a new generation of markets and applications.”
Nanosys silicon nanowires, which demonstrate semiconductor properties, are comprised of single crystal silicon grown using the vapor liquid solid (VLS) process to a diameter of 150 nm and a length of 20 μm.
The materials are available undoped or as activated boron-doped p-type silicon nanowires with 1×1019 /cm3 doping at ends and a 3 μm intrinsic region in the center of the wire. Polydispersed silicon nanowires of various lengths that are designed for use in energy research are also expected to be available beginning January 2011.
Thursday, December 2, 2010
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment
Note: Only a member of this blog may post a comment.