SAN JOSE, USA: As the mobile handset market continues to grow and smartphone usage and market growth become significantly more prevalent, designers are challenged to add functionality while reducing the form factor and components in the overall design.
Responding to customer needs and these trends, Fairchild Semiconductor developed the FDZ3N513ZT – an N-Channel and Schottky diode combination in a small 1mm x 1mm footprint.
The FDZ3N513ZT is an integral element of the boost converter that drives white LEDs in a series string to illuminate the smartphone display (and keys, if a keypad is present).
This solution features low switching losses due to the precise optimization of dynamic characteristics, resulting in high conversion efficiency and longer battery life in cell phone applications.
The FDZ3N513ZT incorporates a 30V integrated N-Channel MOSFET and Schottky diode, featuring exceptionally low typical input capacitance (45pF) and total gate charge (1nC) to improve efficiency in boost converter designs.
The FDZ3N513ZT is housed in a 1mm x 1 mm WL-CSP package and saves 60 percent of board space when compared to devices in 1.6mm x 1.6mm packaging.
Fairchild is a mobile technology leader, offering a substantial portfolio of analog and power IP that can be customized for specific requirements. The FDZ3N513ZT is part of a comprehensive portfolio of advanced MOSFETs and answers the industry’s need for compact, low-profile, high performance MOSFETs for charging, load switching, DC-DC and boost applications.
Thursday, August 12, 2010
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