TI unveils power MOSFETs with reduced top-side thermal impedance to cool high-current DC/DC apps

BANGALORE, INDIA: Texas Instruments Inc. (TI) today introduced the industry’s first family of standard-footprint power MOSFETs that dissipate heat through the top of the package for high-current DC/DC applications.

DualCool NexFET power MOSFETs reduce end equipment size, while providing up to 50 percent more current through the MOSFET and improving thermal management over other standard-footprint packages.

“Our customers demand higher current DC/DC power supplies in a smaller footprint to meet the need for increased processing power in the broad infrastructure market,” said Steve Anderson, TI’s senior vice president and worldwide manager, Power Management. “DualCool NexFET power MOSFETs meet this need by conducting more current in the same form factor.”

“This new family of five NexFET devices allows computing and telecom system designers to use higher current processors with expanded memory while saving board space. These MOSFETs in an advanced package can be used in a wide range of end applications including telecommunications, networking equipment, basestations and high current industrial systems”, said Apoorva Awasthy, Business Development Manager, Analog, Texas Instruments India.

Key features and benefits of DualCool NexFET power MOSFETs:
* Single phase 35-A synchronous buck converter MOSFETs, using single MOSFETs for both the high and low side switches in high-current DC/DC applications.
* Enhanced packaging technology reduces thermal impedance to top of package from 10º to 15°C per watt to 1.2°C per watt, increasing power dissipation capability by up to 80 percent.
* Efficient dual-side heat sinking enables up to 50 percent more current through the FET, giving designers the flexibility to use higher current processors without increasing end equipment size.
* Industry-standard SON package with a 5-mm x 6-mm footprint eases design and keeps cost down, saving 30 mm2 compared to using two standard packages.