NEW YORK, USA: Samsung Electronics Co. Ltd. announced today that it has developed the world’s first 32 Gigabyte (GB) DDR3 module -– for use in server systems.
The new module operates at 1.35-volts, in support of the global trend to cut power usage in mass storage computing environments.
“Compared to the 8GB memory modules used in today’s servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint,” said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc. “For data centers, it’s a powerhouse in energy efficiency and performance,” he added.
Based on Samsung’s 50nm-class 4 Gigabit (Gb) DDR3, the 1.35V DDR3 DRAM improves throughput by 20 percent over a 1.5V DDR3. Its lower power consumption levels are in line with the pressing concern for more energy-efficient “green” systems and components.
The development of low-power 4Gb DDR3 will be viewed as critical in reducing data center costs, improving server time management and increasing overall operational efficiency at higher densities.
For the new generation of green servers, the 4Gb DDR3’s high density combined with its lower level of power consumption will not only reduce electricity bills, but also allow for a cutback on installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
The new 32GB registered dual inline memory module (RDIMM) consists of 72 4Gb DDR3 chip dies produced using Samsung’s 50-nanometer class DRAM production technology. A row of nine quad-die package (QDP) 16Gb DDR3s are mounted on each side of the printed circuit board for a collective 32GB, highly compact configuration.
According to IDC, the worldwide DDR3 DRAM market will account for 29 percent of the total DRAM market in 2009 and 75 percent in 2011. In addition, IDC estimates that 2Gb-or-higher DDR3 DRAM will make up three percent of the total DRAM market in 2009 and 33 percent in 2011 (units in bits).
Showing posts with label low-power DDR3 memory. Show all posts
Showing posts with label low-power DDR3 memory. Show all posts
Thursday, June 18, 2009
Micron brings high-performance, low-power DDR3 memory to notebooks
BOISE, USA: Notebooks can now take advantage of optimized battery life and portability with a new line of low-voltage, high-bandwidth DDR3 memory modules introduced today by Micron Technology Inc.
Offering an unparalleled combination of performance and efficiency for notebook computers, Micron’s new modules are available in densities up to 2-gigabytes (GB) now, with 4GB samples coming this fall.
Sustaining battery life and delivering desktop-equivalent performance are two critical criteria when developing notebook computer designs, and Micron’s new modules provide an ideal combination of performance and power efficiency.
The modules are designed using the industry’s lowest 1.35-volt 1-gigabit (Gb) DDR3 components, allowing for even greater power savings compared to standard 1.5-volt DDR3. More importantly, this low-power is achieved without compromise to memory performance - the modules provide an optimum bandwidth of 1,333 megabits per second.
“Across the board, we are making our DRAM more efficient –- from both a power and performance perspective –- which ultimately empowers users to be more productive,” said Robert Feurle, vice president of DRAM marketing at Micron.
“Our new DDR3 notebook modules offer approximately a 20 percent reduction in power usage compared to standard 1.5-volt modules while maintaining DDR3’s high performance advantage, enabling a desktop-class computing experience for portable computers.”
“Our notebook graphics processing units deliver industry-leading performance and visual fidelity,” said Barry Wagner, director of technical marketing at NVIDIA. “Micron has been a valued partner in defining the performance and power parameters necessary for portable computing applications. We look forward to working with Micron to validate their new modules with our notebook processing solutions.”
Offering an unparalleled combination of performance and efficiency for notebook computers, Micron’s new modules are available in densities up to 2-gigabytes (GB) now, with 4GB samples coming this fall.
Sustaining battery life and delivering desktop-equivalent performance are two critical criteria when developing notebook computer designs, and Micron’s new modules provide an ideal combination of performance and power efficiency.
The modules are designed using the industry’s lowest 1.35-volt 1-gigabit (Gb) DDR3 components, allowing for even greater power savings compared to standard 1.5-volt DDR3. More importantly, this low-power is achieved without compromise to memory performance - the modules provide an optimum bandwidth of 1,333 megabits per second.
“Across the board, we are making our DRAM more efficient –- from both a power and performance perspective –- which ultimately empowers users to be more productive,” said Robert Feurle, vice president of DRAM marketing at Micron.
“Our new DDR3 notebook modules offer approximately a 20 percent reduction in power usage compared to standard 1.5-volt modules while maintaining DDR3’s high performance advantage, enabling a desktop-class computing experience for portable computers.”
“Our notebook graphics processing units deliver industry-leading performance and visual fidelity,” said Barry Wagner, director of technical marketing at NVIDIA. “Micron has been a valued partner in defining the performance and power parameters necessary for portable computing applications. We look forward to working with Micron to validate their new modules with our notebook processing solutions.”
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