SAN DIEGO, USA: Peregrine Semiconductor Corp., a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, announced it has recently shipped its half-billionth UltraCMOS RFIC, a milestone which highlights the successful adoption and proliferation of the company’s disruptive UltraCMOS silicon-on-sapphire technology.
Peregrine’s UltraCMOS technology is a patented variation of silicon-on-insulator (SOI) process that combines industry-standard silicon CMOS circuitry with a highly insulating sapphire substrate, delivering the industry’s highest RF performance in areas such as linearity, isolation, ESD tolerance, speed and switch settling time.
More importantly, UltraCMOS-based RFICs offer an environmentally friendly option to arsenic-based GaAs ICs which have historically been widely used in RF and wireless systems.
With the global move toward ‘green engineering’ and reduction of hazardous substances (RoHS), UltraCMOS SOS devices are poised to offer engineers and manufacturers alike a simple, responsible solution for the next-generation designs demanded by the environmentally conscious consumer.
For years, engineers designing for personal communications devices such as cellular phones and mobile digital assistants sought primarily to increase system performance while reducing size and power consumption.
Today, however, electronics component designers must also take into account emerging standards and regulations regarding waste, hazardous substances and recycling. This is especially the case with handheld electronics, where extremely high global volumes are creating significant disposal issues in the earth’s landfills.
The green technology movement has generated resolutions around the world aimed at banning or limiting hazardous substances found in consumer electronics. In particular, gallium arsenide (GaAs) has been classified in the US, EU and Japan as a toxic compound and dangerous for the environment.
“With current worldwide sales of approximately 1.3 billion units per year, cellular handsets have become not only technology, business and lifestyle drivers but also a leading contributor to eWaste,” stated Jim Cable, president and CEO of Peregrine Semiconductor Corp.
“We believe that by providing a performance advantage with our UltraCMOS technology and by offering systems designers an alternative to arsenic-based RFICs, we are doing our part to help our customers and the environment,” he added.
Showing posts with label Peregrine Semiconductor. Show all posts
Showing posts with label Peregrine Semiconductor. Show all posts
Wednesday, September 16, 2009
Wednesday, June 10, 2009
Peregrine UltraCMOS digital step attenuators feature serial addressability
SAN DIEGO, USA: Peregrine Semiconductor Corp., a leading supplier of high-performance RF CMOS and mixed-signal communications ICs, released the latest in the new UltraCMOS Digital Step Attenuator (DSA) 50Ω series.
Building on their high-performance predecessors, along with direct and latched parallel interface logic these new HaRP-enhanced devices also offer highly flexible serial programmability with attenuation options covering a 7.75 dB (PE43501)and 15.75 dB (PE43601) attenuation range in 0.25 dB steps.
The PE43501 and PE43601 DSAs offer best-in-class linearity, outstanding attenuation accuracy and low Insertion Loss (IL). As with all UltraCMOS silicon-on-sapphire RFICs, there is no gate lag nor phase drift providing exceptionally fast settling time, making them ideal for next generation wireless protocols such as LTE, WiMAX and TD-SCDMA (China’s 3G standard for mobile telecommunication).
These devices provide the industries best linearity and broadband accuracy for cellular base stations, repeaters and femtocells.
These new 50-Ohm DSAs have an operating frequency range of near DC up to 6 GHz with exceptional low-frequency performance, Input IP3 > +60 dBm at 3GHz, superior noise immunity and ESD tolerance of 500V HBM. The device operates with equivalent performance at 3.3V and 5V supply with very low power consumption, allowing the use of a single device in both the RF and IF radio sections to save board space.
Peregrine’s newest DSAs provide many additional features, including on-board CMOS logic which facilitates 2.75 V control, and a high-α state at power-up (PUP). The devices are available in the compact, RoHS-compliant QFN 32-lead package (5x5x0.85 mm). All products are sampling now and are priced at PE43501: $2.12 (50K units); and PE43601: $2.28 (50K units).
Building on their high-performance predecessors, along with direct and latched parallel interface logic these new HaRP-enhanced devices also offer highly flexible serial programmability with attenuation options covering a 7.75 dB (PE43501)and 15.75 dB (PE43601) attenuation range in 0.25 dB steps.
The PE43501 and PE43601 DSAs offer best-in-class linearity, outstanding attenuation accuracy and low Insertion Loss (IL). As with all UltraCMOS silicon-on-sapphire RFICs, there is no gate lag nor phase drift providing exceptionally fast settling time, making them ideal for next generation wireless protocols such as LTE, WiMAX and TD-SCDMA (China’s 3G standard for mobile telecommunication).
These devices provide the industries best linearity and broadband accuracy for cellular base stations, repeaters and femtocells.
These new 50-Ohm DSAs have an operating frequency range of near DC up to 6 GHz with exceptional low-frequency performance, Input IP3 > +60 dBm at 3GHz, superior noise immunity and ESD tolerance of 500V HBM. The device operates with equivalent performance at 3.3V and 5V supply with very low power consumption, allowing the use of a single device in both the RF and IF radio sections to save board space.
Peregrine’s newest DSAs provide many additional features, including on-board CMOS logic which facilitates 2.75 V control, and a high-α state at power-up (PUP). The devices are available in the compact, RoHS-compliant QFN 32-lead package (5x5x0.85 mm). All products are sampling now and are priced at PE43501: $2.12 (50K units); and PE43601: $2.28 (50K units).
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