PUNE, INDIA: ON Semiconductor, a premier supplier of high performance silicon solutions for energy efficient electronics, announced the introduction of six new AEC-Q101 qualified logic level, single channel, power MOSFETs for automotive module in small, flat lead packages.
Offered in a 5 mm x 6 mm SO-8FL package and a 3.3 mm x 3.3 mm WDFN-8 package, these devices use 50 percent or less of the footprint of industry standard DPAK packages, yet offer the same or lower 'on' resistance. The devices save valuable board space versus established DPAK packaged parts and are ideal for load switching, DC-DC conversion, and power management in automotive applications such as fuel injection systems and motor control drivers.
With combinations of 30 volt (V), 40 V and 60 V, N and P channel devices, ON Semiconductor's new power MOSFETs offer customers a wide choice for their new product designs. Very low on resistance [RDS(on)] minimizes conduction and power losses, while high current capabilities - ranging from 6.3 amperes (A) to 65 A depending on device - ensure robust load performance. AEC-Q101 qualification underlines suitability for automotive applications.
The NVMFS4841N (30 V, 65 A, single N-channel) device is housed in an SO-8FL package, while the NVTFS4823N (30 V, 30 A, single N-channel), NVTFS5116PL (60 V, 14 A, single P-channel), NVTFS5811NL (40 V, 40 A, single N-channel) and NVTFS5826NL (60 V, 20 A, single N-channel), and NVTFS5820NL (60 V, 29 A, single N-channel) are offered in WDFN-8 packages.
"Reducing overall module size and dependable, robust performance are two primary requirements for automotive electronics," said Paul Leonard, vice president of ON Semiconductor's Power MOSFET business unit. "These demands are met by our new power MOSFET devices that enable automotive customers to save valuable PCB real estate or incorporate increased functionality into smaller overall designs."
ON Semiconductor's new MOSFET devices are priced between $0.39USD and $0.60USD per unit in 1,500 unit quantities.
Wednesday, February 9, 2011
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